3D Energy Harvester Evaluation

This paper discusses the characterization and evaluation of an MEMS based electrostatic generator, a part of the power supply unit of the self-powered microsystem[1,2,3]. The designed generator is based on electrostatic converter and uses the principle of conversion of non-electric energy into electrical energy by periodical modification of gap between electrodes of a capacitor [4]. The structure is designed and modeled as three-dimensional silicon based MEMS. Innovative approach involving the achievement of very low resonant frequency of the structure (about 100Hz) by usage of modified long cantilever spring design, minimum area of the chip, 3D work mode, the ability to be tuned to reach desired parameters, proves promising directions of possible further development

Design and Fabrication of 3D Electrostatic Energy Harvester

This paper discusses the design of an electrostatic generator, power supply component of the self-powered microsystem, which is able to provide enough energy to power smart sensor chains or if necessary also other electronic monitoring devices. One of the requirements for this analyzer is the mobility, so designing the power supply expects use of an alternative way of getting electricity to power the device, rather than rely on periodic supply of external energy in the form of charging batteries, etc. In this case the most suitable method to use is so-called energy harvesting – a way how to gather energy. This uses the principle of non-electric conversion of energy into electrical energy in the form of converters. The present study describes the topology design of such structures of electrostatic generator. Structure is designed and modeled as a three-dimensional silicon based MEMS. Innovative approach involving the achievement of very low resonant frequency of the structure, while the minimum area of the chip, the ability to work in all 3 axes of coordinate system and ability to be tuned to reach desired parameters proves promising directions of possible further development of this issue. The work includes simulation of electro-mechanical and electrical properties of the structure, description of its behavior in different operating modes and phases of activity. Simulation results were compared with measured values of the produced prototype chip. These results can suggest possible modifications to the proposed structure for further optimization and application environment adaptation

High Power Solid State Retrofit Lamp Thermal Characterization and Modeling

Thermal and thermo-mechanical modeling and characterization of solid state lightening (SSL) retrofit LED lamp are presented in this paper. Paramount importance is to design SSL lamps for reliability, in which thermal and thermo-mechanical aspects are key points. The main goal is to get a precise 3D thermal lamp model for further thermal optimization. Simulations are performed with ANSYS and CoventorWare software tools to compere different simulation approaches. Simulated thermal distribution has been validated with thermal measurement on a commercial 8W LED lamp. Materials parametric study has been carried out to discover problematic parts for heat transfer from power LEDs to ambient and future solutions are proposed. The objectives are to predict the thermal management by simulation of LED lamp, get more understanding in the effect of lamp shape and used materials in order to design more effective LED lamps and predict light quality, life time and reliability

Selective Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires

Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting soft superconducting gap ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana based quantum computing applications, prepared using selective area epitaxy can achieve micron scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications

AMBEATion: Analog Mixed-Signal Back-End Design Automation with Machine Learning and Artificial Intelligence Techniques

For the competitiveness of the European economy, automation techniques in the design of complex electronic systems are a prerequisite for winning the global chip challenge. Specifically, while the physical design of digital Integrated Circuits (ICs) can be largely automated, the physical design of Analog-Mixed-Signal (AMS) ICs built with an analog-on-top flow, where digital subsystems are instantiated as Intellectual Property (IP) modules, is still carried out predominantly by hand, with a time-consuming methodology. The AMBEATion consortium, including global semiconductor and design automation companies as well as leading universities, aims to address this challenge by combining classic Electronic Design Automation (EDA) algorithms with novel Artificial Intelligence and Machine Learning (ML) techniques. Specifically, the scientific and technical result expected at the end of the project will be a new methodology, implemented in a framework of scripts for AMS placement, internally making use of state-of-the-art AI/ML models, and fully integrated with Industrial design flows. With this methodology, the AMBEATion consortium aims to reduce the design turnaround-time and, consequently, the silicon development costs of complex AMS ICs

Observation of the Dynamic Beta Effect at CESR with CLEO

Using the silicon strip detector of the CLEO experiment operating at the Cornell Electron-positron Storage Ring (CESR), we have observed that the horizontal size of the luminous region decreases in the presence of the beam-beam interaction from what is expected without the beam-beam interaction. The dependence on the bunch current agrees with the prediction of the dynamic beta effect. This is the first direct observation of the effect.Comment: 9 page uuencoded postscript file, postscritp file also available through http://w4.lns.cornell.edu/public/CLNS, submitted to Phys. Rev.

Improved Measurement of the Pseudoscalar Decay Constant fDsf_{D_{s}}

We present a new determination of the Ds decay constant, f_{Ds} using 5 million continuum charm events obtained with the CLEO II detector. Our value is derived from our new measured ratio of widths for Ds -> mu nu/Ds -> phi pi of 0.173+/- 0.021 +/- 0.031. Taking the branching ratio for Ds -> phi pi as (3.6 +/- 0.9)% from the PDG, we extract f_{Ds} = (280 +/- 17 +/- 25 +/- 34){MeV}. We compare this result with various model calculations.Comment: 23 page postscript file, postscript file also available through http://w4.lns.cornell.edu/public/CLN

Measurements of the Mass, total Width and Two-Photon Partila Width of the ηc\eta_{c} Meson

Using 13.4 $fb^{-1}$ of data collected with the CLEO detector at the Cornell Electron Storage Ring, we have observed 300 events for the two-photon production of ground-state pseudo-scalar charmonium in the decay $\eta_c$ -> $K_S K^{\mp} \pi^{\pm}$. We have measured the $\eta_c$ mass to be (2980.4 +- 2.3 (stat) +- 0.6 (sys)) MeV and its full width as (27.0 +- 5.8 (stat) +- 1.4 (sys)) MeV. We have determined the two-photon partial width of the $\eta_c$ meson to be (7.6 +- 0.8 (stat) +- 0.4 (sys) +- 2.3 (br)) keV, with the last uncertainty associated with the decay branching fraction.Comment: 9 pages postscript, also available through http://w4.lns.cornell.edu/public/CLN

Measurement of the Relative Branching Fraction of Υ(4S)\Upsilon(4S) to Charged and Neutral B-Meson Pairs

We analyze 9.7 x 10^6 B\bar{B}$ pairs recorded with the CLEO detector to determine the production ratio of charged to neutral B-meson pairs produced at the Y(4S) resonance. We measure the rates for B^0 -> J/psi K^{(*)0} and B^+ -> J/psi K^{(*)+} decays and use the world-average B-meson lifetime ratio to extract the relative widths f+-/f00 = Gamma(Y(4S) -> B+B-)/Gamma(Y(4S) -> B0\bar{B0}) = = 1.04 +/- 0.07(stat) +/- 0.04(syst). With the assumption that f+- + f00 = 1, we obtain f00 = 0.49 +/- 0.02(stat) +/- 0.01(syst) and f+- = 0.51 +/- 0.02(stat) +/- 0.01(syst). This production ratio and its uncertainty apply to all exclusive B-meson branching fractions measured at the Y(4S) resonance.Comment: 11 pages postscript, also available through http://w4.lns.cornell.edu/public/CLN

Correlated /\c-/\cbar production in e+e- annihilations at sqrt{s}~10.5 GeV

Using 13.6/fb of continuum two-jet e+e- -> ccbar events collected with the CLEO detector, we have searched for baryon number correlations at the primary quark level. We have measured the likelihood for a /\c+ charmed baryon to be produced in the hemisphere opposite a /\c- relative to the likelihood for a /\c+ charmed baryon to be produced opposite an anticharmed meson Dbar; in all cases, the reconstructed hadrons must have momentum greater than 2.3 GeV/c. We find that, given a /\c- (reconstructed in five different decay modes), a /\c+ is observed in the opposite hemisphere (0.72+/-0.11)% of the time (not corrected for efficiency). By contrast, given a Dbar in one hemisphere, a /\c+ is observed in the opposite hemisphere only (0.21+/-0.02)% of the time. Normalized to the total number of either /\c- or Dbar ``tags'', it is therefore 3.52+/-0.45+/-0.42 times more likely to find a /\c+ opposite a /\c- than a Dbar meson. This enhancement is not observed in the JETSET 7.3 e+e- -> ccbar Monte Carlo simulation.Comment: 19 pages, Latex, one figure separat